Prepared by: Alan Ball ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction
the high side or an n-channel FET can be added in the low
Semiconductor’s eFuses offer low cost, low
impedance solutions for bus protection and offer much
N-channel FETs are more cost effective and are normally
faster protection than many fuse solutions. They are an
preferred if it is acceptable to break the ground line. If the
effective replacement for a polyfuse and TVS clamping
load has other connections to circuits that may be energized
under a reverse polarity input condition, the ground should
One area in which they differ in performance is reverse
polarity protection. While a TVS device and polyfuse will
If it is required to break the high side, a p-channel FET
protect against reverse voltages, the nature of an integrated
should be used. The two circuit configurations are shown in
semiconductor device does not inherently allow for this type
The reverse protection circuit includes a zener protection
This simple circuit allows the device to protect against
diode to protect against excessive gate to source voltage that
reverse voltage situations by simply blocking the reverse
could damage the FET. For FETs with 12 V or lower gates,
voltage. This is equivalent of the action of a poly fuse only
this is recommended. For FETs with 20 V gates, the zener
with less leakage. In comparison to a mechanical fuse, this
and resistor can be eliminated and the gate tied directly to the
is a far superior solution since the mechanical fuse will not
other rail as long as the maximum system transient spec is
reset and this circuit will automatically reset when the
A table of suggested FETs is included. The voltage and
Circuit Description
DS(on) are only suggestions. The system voltage
specifications should be taken into account to determine the
In order to protect against reverse voltages an external
maximum FET voltage and the losses due to the R
switch is required. There are two basic topologies that can
the FET. Please see the ON Semiconductor website
accomplish this function. A p-channel FET can be added in
(www.onsemi.com) for more options for FET choices. Figure 1. High-side Protection Circuit.
Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0 AND8350/D Figure 2. Low-side Protection Circuit. Table 1. SUGGESTED FETS FOR REVERSE PROTECTION CIRCUITS Recommended N-Channel FETs Recommended P-Channel FETs ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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DHC-3 OTTER CD-ROM UPDATE 2 Correct to 1 January 2007 As promised on the CD, periodic Updates will be published to report on developments to the Otter fleet since the publication of the CD, the information on which was correct to the 1st January 2005. Update 1 was issued with the CD and this second Update brings the situation up to the 1st January 2007. It includes a listing of all O